Invention Grant
- Patent Title: Method to optimize standard cells manufacturability
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Application No.: US15483516Application Date: 2017-04-10
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Publication No.: US10262097B2Publication Date: 2019-04-16
- Inventor: Lin Hong , Xue Li
- Applicant: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) CORPORATION , SEMICONDUCTOR MANUFACTURING INTERNATIONAL (BEIJING) CORPORATION
- Applicant Address: CN Shanghai CN Beijing
- Assignee: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) CORPORATION,SEMICONDUCTOR MANUFACTURING INTERNATIONAL (BEIJING) CORPORATION
- Current Assignee: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) CORPORATION,SEMICONDUCTOR MANUFACTURING INTERNATIONAL (BEIJING) CORPORATION
- Current Assignee Address: CN Shanghai CN Beijing
- Agency: Kilpatrick Townsend & Stockton LLP
- Priority: CN201610240598 20160418
- Main IPC: G06F17/50
- IPC: G06F17/50

Abstract:
A method for optimizing manufacturability of standard cells includes generating random contexts for the standard cells, inserting vias into the standard cells, and performing a lithography verification on the standard cells after the vias have been inserted. The method enables early detection and resolution of potential hot spots on standard cell pin connections and reduction of hot spots that are introduced by the router at the chip level. The early detection and reduction of hot spots shortens the cycle time of a standard-cell based design.
Public/Granted literature
- US20170300609A1 METHOD TO OPTIMIZE STANDARD CELLS MANUFACTURABILITY Public/Granted day:2017-10-19
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