Invention Grant
- Patent Title: Selective oxidation of transition metal nitride layers within compound semiconductor device structures
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Application No.: US15843041Application Date: 2017-12-15
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Publication No.: US10262856B2Publication Date: 2019-04-16
- Inventor: David J. Meyer , Brian P. Downey , Daniel S. Green
- Applicant: The United State of America, as represented by the Secretary of the Navy
- Applicant Address: US DC Washington
- Assignee: The United States of America, as represented by the Secretary of the Navy
- Current Assignee: The United States of America, as represented by the Secretary of the Navy
- Current Assignee Address: US DC Washington
- Agency: US Naval Research Laboratory
- Agent Joslyn Barritt
- Main IPC: H01L21/02
- IPC: H01L21/02
Abstract:
Methods for integrating transition metal oxide (TMO) layers into a compound semiconductor device structure via selective oxidation of transition metal nitride (TMN) layers within the structure.
Public/Granted literature
- US20180174833A1 Selective Oxidation of Transition Metal Nitride Layers Within Compound Semiconductor Device Structures Public/Granted day:2018-06-21
Information query
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