In an embodiment, on an n−type SiC layer on an n+-type SiC semiconductor substrate and a p+ layer selectively formed on the n−type SiC layer, a p base layer is formed on which, a p+ contact layer is selectively formed. From a surface, an n counter layer penetrates the p base layer to the n−type SiC layer. A gate electrode layer is disposed via a gate insulating film, on an exposed surface of the p base layer between the p+ contact layer and the n counter layer; and a source electrode contacts the p+ contact layer and the p base layer. In a back surface, a drain electrode is disposed. A portion of the p+ layers are joined at a region of a drain electrode side of the n counter layer, by a joining unit and a p+ layer contacts a drain electrode side of the p+ layer.