Invention Grant
- Patent Title: Semiconductor device and power conversion device
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Application No.: US15424122Application Date: 2017-02-03
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Publication No.: US10263538B2Publication Date: 2019-04-16
- Inventor: Kentaro Ikeda
- Applicant: KABUSHIKI KAISHA TOSHIBA
- Applicant Address: JP Minato-ku
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Minato-ku
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2016-137390 20160712
- Main IPC: H03K3/00
- IPC: H03K3/00 ; H02M7/537 ; H01L29/78 ; H03K17/16 ; H01L27/06 ; H01L49/02 ; H01L29/06 ; H01L29/16 ; H01L29/20 ; H01L29/872
Abstract:
A semiconductor device according to an embodiment includes a transistor including a first electrode, a second electrode, and a gate electrode, an electric resistance being electrically connected to the gate electrode, a diode including an anode being electrically connected to the first electrode and a cathode being electrically connected between the electric resistance and the gate electrode, and a capacitor being connected in parallel with the electric resistance.
Public/Granted literature
- US20180019686A1 SEMICONDUCTOR DEVICE AND POWER CONVERSION DEVICE Public/Granted day:2018-01-18
Information query
