Invention Grant
- Patent Title: Methods of forming micro-electro-mechanical devices including a conductive feature extending through an escort ring
-
Application No.: US14925345Application Date: 2015-10-28
-
Publication No.: US10266390B2Publication Date: 2019-04-23
- Inventor: Shang-Ying Tsai , Hsin-Ting Huang , Lung Yuan Pan , Jung-Huei Peng , Hung-Hua Lin , Yao-Te Huang
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Slater Matsil, LLP
- Main IPC: B81B7/00
- IPC: B81B7/00 ; B81C1/00 ; H01G5/18 ; H01L49/02 ; G01P15/08 ; G01P15/125

Abstract:
A device includes a substrate, a routing conductive line over the substrate, a dielectric layer over the routing conductive line, and an etch stop layer over the dielectric layer. A Micro-Electro-Mechanical System (MEMS) device has a portion over the etch stop layer. A contact plug penetrates through the etch stop layer and the dielectric layer. The contact plug connects the portion of the MEMS device to the routing conductive line. An escort ring is disposed over the etch stop layer and under the MEMS device, wherein the escort ring encircles the contact plug.
Public/Granted literature
- US20160046482A1 MEMS Devices and Methods of Forming the Same Public/Granted day:2016-02-18
Information query