Invention Grant
- Patent Title: Semiconductive structure and manufacturing method thereof
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Application No.: US14832264Application Date: 2015-08-21
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Publication No.: US10266395B2Publication Date: 2019-04-23
- Inventor: Yen-Cheng Liu , Hsin-Ting Huang , Shang-Ying Tsai , Kuei-Sung Chang
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Current Assignee Address: TW Hsinchu
- Agency: WPAT, P.C., Intellectual Propery Attorneys
- Agent Anthony King
- Main IPC: B81B7/00
- IPC: B81B7/00 ; B81B7/02 ; B81B3/00 ; B81C1/00

Abstract:
A semiconductive structure includes a first substrate including a first surface and a second surface opposite to the first surface, a second substrate disposed over the first surface and including a first device and a second device, a first capping structure disposed over the second substrate, and including a via extending through the first capping structure to the second device, a first cavity surrounding the first device and defined by the first capping structure and the first substrate, a second cavity surrounding the second device and defined by the first capping structure and the first substrate, and a second capping structure disposed over the first capping structure and covering the via, wherein the second cavity and the via are sealed by the second capping structure.
Public/Granted literature
- US20170050841A1 SEMICONDUCTIVE STRUCTURE AND MANUFACTURING METHOD THEREOF Public/Granted day:2017-02-23
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