Memory with bit line short circuit detection and masking of groups of bad bit lines
Abstract:
Techniques and memory devices are provided in which bit line short circuits are detected and groups of bit lines are masked off. A process tests groups of bit lines which are connected to a sense circuit. A masking latch is provided to store test results for each group of bit lines. Once the testing of a group is completed, the test result is communicated to a controller. Moreover, the same masking latch can store and communicate test results for multiple groups of bit lines which are connected to a sense circuit. In a user mode, a masking latch stores masking data for each group of bit lines. In response to a power on reset, the masking data is loaded into the masking latches and remains there over multiple write and read operation, until a next power on reset occurs.
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