Invention Grant
- Patent Title: Memory with bit line short circuit detection and masking of groups of bad bit lines
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Application No.: US15491691Application Date: 2017-04-19
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Publication No.: US10269444B2Publication Date: 2019-04-23
- Inventor: Anurag Nigam , Yukeun Sim , Jingwen Ouyang , Yingchang Chen
- Applicant: SanDisk Technologies LLC
- Applicant Address: US TX Addison
- Assignee: SanDisk Technologies LLC
- Current Assignee: SanDisk Technologies LLC
- Current Assignee Address: US TX Addison
- Agency: Vierra Magen Marcus LLP
- Main IPC: G11C29/38
- IPC: G11C29/38 ; G11C7/10 ; G11C13/00 ; G11C29/02 ; G11C29/44 ; G11C29/00 ; G11C29/12

Abstract:
Techniques and memory devices are provided in which bit line short circuits are detected and groups of bit lines are masked off. A process tests groups of bit lines which are connected to a sense circuit. A masking latch is provided to store test results for each group of bit lines. Once the testing of a group is completed, the test result is communicated to a controller. Moreover, the same masking latch can store and communicate test results for multiple groups of bit lines which are connected to a sense circuit. In a user mode, a masking latch stores masking data for each group of bit lines. In response to a power on reset, the masking data is loaded into the masking latches and remains there over multiple write and read operation, until a next power on reset occurs.
Public/Granted literature
- US20180174668A1 Memory With Bit Line Short Circuit Detection And Masking Of Groups Of Bad Bit Lines Public/Granted day:2018-06-21
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