Invention Grant
- Patent Title: Manufacturing method of semiconductor device
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Application No.: US15679310Application Date: 2017-08-17
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Publication No.: US10269631B2Publication Date: 2019-04-23
- Inventor: Kentaro Kita , Takeshi Hayashi , Koji Ikuta
- Applicant: Renesas Electronics Corporation
- Applicant Address: JP Tokyo
- Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: McDermott Will & Emery LLP
- Priority: JP2016-182803 20160920
- Main IPC: H01L21/4763
- IPC: H01L21/4763 ; H01L21/768 ; H01L21/02
Abstract:
As a barrier metal film, a titanium film is formed by a sputtering process, and a titanium nitride film is formed to cover the titanium film by a CVD process. Next, the back surface of a semiconductor substrate is cleaned by spraying a cleaning chemical liquid toward the back surface thereof, and a portion of the barrier metal film located in the outer peripheral portion is removed by causing the cleaning chemical liquid to wrap around toward the surface side of the outer peripheral portion from the back surface side. Next, a tungsten film is formed to cover the barrier metal film by a CVD process.
Public/Granted literature
- US20180082891A1 MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE Public/Granted day:2018-03-22
Information query
IPC分类:
