Invention Grant
- Patent Title: Semiconductor device and method
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Application No.: US15463929Application Date: 2017-03-20
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Publication No.: US10269632B2Publication Date: 2019-04-23
- Inventor: Ming-Hui Chu , Chih-Yuan Ting , Jyu-Horng Shieh
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company
- Current Assignee: Taiwan Semiconductor Manufacturing Company
- Current Assignee Address: TW Hsin-Chu
- Agency: Slater Matsil, LLP
- Main IPC: H01L21/768
- IPC: H01L21/768 ; H01L23/522 ; H01L21/311 ; H01L23/532 ; H01L23/528
Abstract:
A method of forming a semiconductor device is provided. Metallic interconnects are formed in a dielectric layer of the semiconductor device. A hard mask is used to avoid usual problems faced by manufacturers, such as possibility of bridging different conductive elements and via patterning problems when there are overlays between vias and trenches. The hard mask is etched multiple times to extend via landing windows, while keeping distance between the conductive elements to avoid the bridging problem.
Public/Granted literature
- US20170271205A1 Semiconductor Device and Method Public/Granted day:2017-09-21
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