Invention Grant
- Patent Title: Semiconductor device and method of fabricating the same
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Application No.: US15605995Application Date: 2017-05-26
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Publication No.: US10269636B2Publication Date: 2019-04-23
- Inventor: Jia-Chuan You , Chia-Hao Chang , Wai-Yi Lien , Yu-Ming Lin , Chih-Hao Wang
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee Address: TW Hsinchu
- Agency: McClure, Qualey & Rodack, LLP
- Main IPC: H01L21/768
- IPC: H01L21/768 ; H01L23/535 ; H01L29/49 ; H01L29/78
Abstract:
A semiconductor device includes a semiconductor substrate, a gate structure, a first spacer, a second spacer, and a first contact plug. The gate structure is disposed on the semiconductor substrate. The first spacer is disposed around the gate structure. The second spacer is disposed on the first spacer. The first contact plug lands on the second spacer and the gate structure.
Public/Granted literature
- US20180342420A1 SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME Public/Granted day:2018-11-29
Information query
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