Invention Grant
- Patent Title: Semiconductor device and manufacturing method of semiconductor device
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Application No.: US15547599Application Date: 2015-04-08
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Publication No.: US10269681B2Publication Date: 2019-04-23
- Inventor: Satoru Kikugawa
- Applicant: Mitsubishi Electric Corporation
- Applicant Address: JP Tokyo
- Assignee: Mitsubishi Electric Corporation
- Current Assignee: Mitsubishi Electric Corporation
- Current Assignee Address: JP Tokyo
- Agency: Posz Law Group, PLC
- International Application: PCT/JP2015/061041 WO 20150408
- International Announcement: WO2016/162991 WO 20161013
- Main IPC: H01L23/40
- IPC: H01L23/40 ; H01L23/367 ; H01L21/48

Abstract:
A semiconductor device includes: a wiring board including an insulating board and a wiring layer, the insulating board having an element mounting surface, which is a first main surface, and a back surface, which is a second main surface on the opposite side of the element mounting surface, the wiring layer being formed on the back surface and including a wiring portion and a heat dissipation portion; a power element that is a semiconductor element, is mounted on the element mounting surface of the wiring board, and is connected to the wiring portion; a spacer that is interposed between the power element and the element mounting surface of the wiring board and is connected to the back-surface-side heat dissipation portion; and a heatsink that sandwiches, together with the spacer, the power element and is secured to the spacer.
Public/Granted literature
- US20180019186A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE Public/Granted day:2018-01-18
Information query
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