Invention Grant
- Patent Title: Semiconductor device and manufacturing method of semiconductor device
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Application No.: US15061992Application Date: 2016-03-04
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Publication No.: US10269748B2Publication Date: 2019-04-23
- Inventor: Ippei Kume , Kengo Uchida
- Applicant: TOSHIBA MEMORY CORPORATION
- Applicant Address: JP Tokyo
- Assignee: Toshiba Memory Corporation
- Current Assignee: Toshiba Memory Corporation
- Current Assignee Address: JP Tokyo
- Agency: Kim & Stewart LLP
- Priority: JP2015-110744 20150529
- Main IPC: H01L23/00
- IPC: H01L23/00 ; H01L23/48 ; H01L21/768

Abstract:
A semiconductor device includes a semiconductor substrate provided with a through hole that extends therethrough from a first surface to a second surface on a side opposite to the first surface, a device layer provided at the first surface of the semiconductor substrate which includes an electrode, an insulating layer that covers the device layer, a first through electrode that extends through the insulating layer, an insulating layer that extends from the second surface of the semiconductor substrate to a bottom surface of the through hole through an inner surface of the through hole of the semiconductor substrate, and in which the portion thereof in contact with the bottom surface has a tapered shape, and a second through electrode electrically connected to the electrode in the device layer that is exposed to the bottom surface of the through hole.
Public/Granted literature
- US20160351521A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE Public/Granted day:2016-12-01
Information query
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