Invention Grant
- Patent Title: Array of cross point memory cells and methods of forming an array of cross point memory cells
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Application No.: US15151582Application Date: 2016-05-11
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Publication No.: US10269804B2Publication Date: 2019-04-23
- Inventor: Durai Vishak Nirmal Ramaswamy
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Wells St. John P.S.
- Main IPC: H01L27/10
- IPC: H01L27/10 ; H01L27/24 ; H01L27/11502 ; H01L45/00 ; G11C11/22
Abstract:
A method of forming an array of cross point memory cells comprises using two, and only two, masking steps to collectively pattern within the array spaced lower first lines, spaced upper second lines which cross the first lines, and individual programmable devices between the first lines and the second lines where such cross that have an upwardly open generally U-shape vertical cross-section of programmable material laterally between immediately adjacent of the first lines beneath individual of the upper second lines. Arrays of cross point memory cells independent of method of manufacture are disclosed.
Public/Granted literature
- US20170330881A1 Array Of Cross Point Memory Cells And Methods Of Forming An Array Of Cross Point Memory Cells Public/Granted day:2017-11-16
Information query
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