Invention Grant
- Patent Title: Magnetoresistive element and magnetic memory
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Application No.: US15010669Application Date: 2016-01-29
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Publication No.: US10269866B2Publication Date: 2019-04-23
- Inventor: Yushi Kato , Tadaomi Daibou , Eiji Kitagawa , Takao Ochiai , Junichi Ito , Takahide Kubota , Shigemi Mizukami , Terunobu Miyazaki
- Applicant: Kabushiki Kaisha Toshiba , Tohoku University
- Applicant Address: JP Minato-ku JP Sendai-shi
- Assignee: KABUSHIKI KAISHA TOSHIBA,TOHOKU UNIVERSITY
- Current Assignee: KABUSHIKI KAISHA TOSHIBA,TOHOKU UNIVERSITY
- Current Assignee Address: JP Minato-ku JP Sendai-shi
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2013-161823 20130802
- Main IPC: H01L27/22
- IPC: H01L27/22 ; H01L43/02 ; H01L43/08 ; H01L43/10
Abstract:
A magnetoresistive element includes: a first ferromagnetic layer; a second ferromagnetic layer; and a first nonmagnetic layer disposed between the first ferromagnetic layer and the second ferromagnetic layer, the first ferromagnetic layer including (MnxGay)100-zPtz, the (MnxGay)100-zPtz having a tetragonal crystal structure, where 45 atm %≤x≤75 atm %, 25 atm %≤y≤55 atm %, x+y=100 atm %, and 0 atm %
Public/Granted literature
- US20160148975A1 MAGNETORESISTIVE ELEMENT AND MAGNETIC MEMORY Public/Granted day:2016-05-26
Information query
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