A surrounded emitter bipolar device includes a substrate having a p-epitaxial (p-epi) layer thereon, and a p-base in the p-epi layer. A two dimensional (2D) array of p-base contacts (base units) include the p-base, wherein each base unit includes an outer dielectric structure surrounding an inner dielectric isolation ring. The inner dielectric isolation ring surrounds an n region (n+moat). A first portion of the n+moats are collector (C) units, and a second portion of the n+moats are emitter (E) units. Each of the E units is separated from a nearest neighbor E unit by a C unit.