Invention Grant
- Patent Title: Fin field effect transistors having conformal oxide layers and methods of forming same
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Application No.: US15357675Application Date: 2016-11-21
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Publication No.: US10269921B2Publication Date: 2019-04-23
- Inventor: Chia-Cheng Chen , Liang-Yin Chen , Xiong-Fei Yu , Syun-Ming Jang , Hui-Cheng Chang , Meng-Shu Lin
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Slater Matsil, LLP
- Main IPC: H01L29/51
- IPC: H01L29/51 ; H01L21/8234 ; H01L27/088 ; H01L29/78 ; H01L21/28 ; H01L29/66 ; H01L29/165
Abstract:
An embodiment fin field-effect-transistor (finFET) includes a semiconductor fin comprising a channel region and a gate oxide on a sidewall and a top surface of the channel region. The gate oxide includes a thinnest portion having a first thickness and a thickest portion having a second thickness different than the first thickness. A difference between the first thickness and the second thickness is less than a maximum thickness variation, and the maximum thickness variation is in accordance with an operating voltage of the finFET.
Public/Granted literature
- US20180145143A1 Fin Field Effect Transistors having Conformal Oxide Layers and Methods of Forming Same Public/Granted day:2018-05-24
Information query
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