Invention Grant
- Patent Title: Liftoff process for exfoliation of thin film photovoltaic devices and back contact formation
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Application No.: US15845455Application Date: 2017-12-18
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Publication No.: US10269994B2Publication Date: 2019-04-23
- Inventor: Richard A. Haight , James B. Hannon , Satoshi Oida
- Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Tutunjian & Bitetto, P.C.
- Agent Vazken Alexanian
- Main IPC: H01L31/18
- IPC: H01L31/18 ; H01L31/0224 ; H01L31/0392 ; H01L31/032 ; H01L31/0445 ; H01L31/0216 ; H01L31/072

Abstract:
A method for forming a back contact on an absorber layer in a photovoltaic device includes forming a two dimensional material on a first substrate. An absorber layer including Cu—Zn—Sn—S(Se)(CZTSSe) is grown over the first substrate on the two dimensional material. A buffer layer is grown on the absorber layer on a side opposite the two dimensional material. The absorber layer is exfoliated from the two dimensional material to remove the first substrate from a backside of the absorber layer opposite the buffer layer. A back contact is deposited on the absorber layer.
Public/Granted literature
- US20180108793A1 LIFTOFF PROCESS FOR EXFOLIATION OF THIN FILM PHOTOVOLTAIC DEVICES AND BACK CONTACT FORMATION Public/Granted day:2018-04-19
Information query
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