Disclosed is a light emitting diode including a side reflection layer. The light emitting diode includes a substrate having a side surface and an upper surface; a semiconductor stack disposed under the substrate and including a first conductivity type semiconductor layer, a second conductivity type semiconductor layer, and an active layer interposed between the first conductivity type semiconductor layer and the second conductivity type semiconductor layer; an ohmic reflection layer electrically connected to the second conductivity type semiconductor layer; a first bump pad disposed under the ohmic reflection layer and electrically connected to the first conductivity type semiconductor layer; a second bump pad disposed under the ohmic reflection layer and electrically connected to the second conductivity type semiconductor layer; a side reflection layer covering the side surface of the substrate; and a capping layer covering the upper surface of the substrate and the side reflection layer.