Invention Grant
- Patent Title: Apparatus and method for carbon film deposition profile control
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Application No.: US14809905Application Date: 2015-07-27
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Publication No.: US10280512B2Publication Date: 2019-05-07
- Inventor: Alex Tsung-Liang Chen , Simon Ruffell
- Applicant: Varian Semiconductor Equipment Associates, Inc.
- Applicant Address: US MA Gloucester
- Assignee: Varian Semiconductor Equipment Associates, Inc.
- Current Assignee: Varian Semiconductor Equipment Associates, Inc.
- Current Assignee Address: US MA Gloucester
- Main IPC: C23F1/00
- IPC: C23F1/00 ; C23C16/52 ; C23C16/26 ; C23C16/458 ; C23C16/48 ; C23C16/505 ; C23C16/56 ; C23C14/06 ; C23C14/22 ; C23C14/46 ; C23C14/54 ; H01L21/02 ; H01L21/223

Abstract:
In one embodiment, an apparatus to selectively deposit a carbon layer on substrate, comprising a plasma chamber to receive a flow of carbon-containing gas; a power source to generate a plasma containing the carbon-containing gas in the plasma chamber; an extraction plate to extract an ion beam from the plasma and direct the ion beam to the substrate, the ion beam comprising ions having trajectories forming a non-zero angle of incidence with respect to a perpendicular to a plane of the substrate, the extraction plate further configured to conduct a neutral species derived from the carbon-containing gas to the substrate; and a substrate stage facing the extraction plate and including a heater to heat the substrate to a first temperature, when the ion beam and carbon-containing species impinge on the substrate.
Public/Granted literature
- US20170029950A1 APPARATUS AND METHOD FOR CARBON FILM DEPOSITION PROFILE CONTROL Public/Granted day:2017-02-02
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