A display device and a method for making the same are provided. In the method, source and drain contacts are patterned on a buffer layer. An IGZO layer is depositing over at least a portion of the source contact and a portion of the drain contact. A gate structure is formed over the IGZO layer. A silicon nitride layer is deposited over the gate structure and the IGZO layer to form a first doped region in the IGZO layer and a second doped region in the IGZO layer. A pixel electrode is formed over the buffer layer. A plurality of pixel walls are formed over the buffer layer, the plurality of pixel walls being associated with an electrowetting pixel and the pixel electrode being configured to a apply voltage within the electrowetting pixel. At least one of the source contact and the drain contact is connected to the pixel electrode.