A system for controlling a hold-margin in a semiconductor memory device includes a programmable RC network communicatively coupled to a delay logic circuit, a latch clock generator and a latch circuit. A delay associated with a clock path is induced using a combination of a logic circuit and a wire placed across at least one of a column and a row of the semiconductor memory device. A delay associated with the data path is induced using a combination of the delay logic circuit and at least one of the load cell and a wire routed across at least one of a column and a row of the semiconductor memory device. The system controls the hold-margin based on the delay associated with the data path and the delay associated with the clock path.