Various memory devices and associated methods of operation are disclosed herein. An exemplary method includes flowing a current through an electrode of a memory device. The current exerts a spin-torque for orienting a magnetic field of a magnetic layer of the memory device and produces a magnetic field in the electrode that assists in orienting the magnetic field of the magnetic layer. The current can produce the magnetic field in the electrode when flowing through a region of the electrode having a winding orientation that is substantially perpendicular to a longitudinal axis of the memory device. In some implementations, flowing the current through the electrode includes storing data in the memory device.