Invention Grant
- Patent Title: Method and circuit for adaptive read-write operation in self-timed memory
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Application No.: US15917227Application Date: 2018-03-09
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Publication No.: US10283191B1Publication Date: 2019-05-07
- Inventor: Abhishek Pathak , Tanmoy Roy , Shishir Kumar
- Applicant: STMicroelectronics International N.V.
- Applicant Address: NL Schiphol
- Assignee: STMicroelectronics International N.V.
- Current Assignee: STMicroelectronics International N.V.
- Current Assignee Address: NL Schiphol
- Agency: Crowe & Dunlevy
- Main IPC: G11C7/00
- IPC: G11C7/00 ; G11C11/412 ; G11C7/14 ; G11C11/419

Abstract:
Disclosed herein is a memory circuit including a dummy word line driver driving a dummy word line, dummy memory cells coupled to a dummy bit line and a dummy complementary bit line, and a transmission gate coupled to the dummy word line to pass a word line signal from the dummy word line driver to an input of the dummy memory cells. A transistor is coupled to the dummy word line between the transmission gate and a pair of pass gates of a given one of the dummy memory cells closest to the transmission gate along the dummy word line. A reset signal output is coupled to the dummy complementary bit line. The transistor serves to lower a voltage on the dummy word line, and a reset signal indicating an end of a measured dummy cycle is generated at the reset signal output.
Public/Granted literature
- US1698416A Clutch mechanism for sign changers Public/Granted day:1929-01-08
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