Invention Grant
- Patent Title: Semiconductor memory device and method of operating the same
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Application No.: US15606798Application Date: 2017-05-26
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Publication No.: US10283203B2Publication Date: 2019-05-07
- Inventor: Jin Yong Seong
- Applicant: SK hynix Inc.
- Applicant Address: KR Gyeonggi-do
- Assignee: SK hynix Inc.
- Current Assignee: SK hynix Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: IP & T Group LLP
- Priority: KR10-2016-0117333 20160912
- Main IPC: G11C16/10
- IPC: G11C16/10 ; G11C16/04 ; G11C16/34 ; G11C16/26 ; G11C16/30 ; G11C16/08 ; G11C16/24 ; G11C11/34 ; G11C11/063 ; G06F13/16 ; G11C7/10 ; G11C16/22

Abstract:
Provided herein are a semiconductor memory device and a method of operating the same. The semiconductor memory device includes a memory cell array including a plurality of memory cells, a status signal generator configured to output an internal status signal indicating whether an operation of the memory cell array has been completed or is being performed and a ready/busy line input mode control unit configured to output a ready/busy signal through a ready/busy line based on the internal status signal or to receive an input signal from an external device through the ready/busy line.
Public/Granted literature
- US20180075910A1 SEMICONDUCTOR MEMORY DEVICE AND METHOD OF OPERATING THE SAME Public/Granted day:2018-03-15
Information query