Invention Grant
- Patent Title: Systems and methods for gap filling improvement
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Application No.: US15488652Application Date: 2017-04-17
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Publication No.: US10283359B2Publication Date: 2019-05-07
- Inventor: Chi-Yuan Chen , Li-Ting Wang , Teng-Chun Tsai , Chun-I Tsai , Wei-Jung Lin , Huang-Yi Huang , Cheng-Tung Lin , Hong-Mao Lee
- Applicant: Taiwan Semiconductor Manufacturing Company Limited
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Company Limited
- Current Assignee: Taiwan Semiconductor Manufacturing Company Limited
- Current Assignee Address: TW Hsinchu
- Agency: Jones Day
- Main IPC: C23C14/04
- IPC: C23C14/04 ; C23C14/48 ; C23C14/58 ; H01L21/02 ; H01L21/04 ; H01L29/66 ; H01L21/225 ; H01L21/762 ; H01L21/768 ; H01L21/3115 ; H01L21/3213 ; H01L21/3215
Abstract:
Systems and methods are provided for contact formation. A semiconductor structure is provided. The semiconductor structure includes an opening formed by a bottom surface and one or more side surfaces. A first conductive material is formed on the bottom surface and the one or more side surfaces to partially fill the opening, the first conductive material including a top portion and a bottom portion. Ion implantation is formed on the first conductive material, the top portion of the first conductive material being associated with a first ion density, the bottom portion of the first conductive material being associated with a second ion density lower than the first ion density. At least part of the top portion of the first conductive material is removed. A second conductive material is formed to fill the opening.
Public/Granted literature
- US20170221710A1 Systems and Methods for Gap Filling Improvement Public/Granted day:2017-08-03
Information query
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