An object is to provide a method and apparatus for measuring a surface profile that enable correction or the like of the surface profile through measuring the surface profile of a semiconductor layer when forming the semiconductor layer by a vapor deposition method. A single laser beam is reflected by a movable mirror to generate incident laser beams (Ld1, Ld2 and Ld3) separated substantially into three beams, and incident points (P1, P2 and P3) on the surface of a semiconductor layer (7) being formed in a chamber (2) are irradiated with the incident laser beams (Ld1, Ld2 and Ld3). A beam position sensor detects reflected laser beams (Lv1, Lv2 and Lv3) from the irradiation points (P1, P2 and P3) thereby to measure the surface profile of a film that includes the incident points (P1, P2 and P3).