Invention Grant
- Patent Title: Semiconductor device
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Application No.: US15274247Application Date: 2016-09-23
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Publication No.: US10283429B2Publication Date: 2019-05-07
- Inventor: Shingo Iwasaki , Tomomi Okumura
- Applicant: Toyota Jidosha Kabushiki Kaisha , Denso Corporation
- Applicant Address: JP Toyota-shi JP Kariya-shi
- Assignee: Toyota Jidosha Kabushiki Kaisha,Denso Corporation
- Current Assignee: Toyota Jidosha Kabushiki Kaisha,Denso Corporation
- Current Assignee Address: JP Toyota-shi JP Kariya-shi
- Agency: Dinsmore & Shohl LLP
- Priority: JP2015-188240 20150925
- Main IPC: H01L23/31
- IPC: H01L23/31 ; H01L23/373 ; H01L23/433 ; H01L23/00 ; H01L23/051

Abstract:
A semiconductor device includes: a semiconductor element; a heat sink including a first surface and a second surface, the semiconductor element being joined to the first surface, the second surface being a surface on an opposite side of the first surface; and a package that is in contact with the semiconductor element and the first surface of the heat sink, the package including a recess portion in an outer face, wherein the heat sink includes a thick portion, and a thin portion having a thickness that is smaller than that of the thick portion, and the thin portion is located on a line connecting an outer face of the semiconductor element and the recess portion in a shortest distance.
Public/Granted literature
- US20170092559A1 SEMICONDUCTOR DEVICE Public/Granted day:2017-03-30
Information query
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