Invention Grant
- Patent Title: Power semiconductor device and method for manufacturing same
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Application No.: US15234524Application Date: 2016-08-11
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Publication No.: US10283430B2Publication Date: 2019-05-07
- Inventor: Yasunari Hino , Kiyoshi Arai
- Applicant: Mitsubishi Electric Corporation
- Applicant Address: JP Tokyo
- Assignee: Mitsubishi Electric Corporation
- Current Assignee: Mitsubishi Electric Corporation
- Current Assignee Address: JP Tokyo
- Agency: Studebaker & Brackett PC
- Priority: JP2015-248917 20151221
- Main IPC: H01L23/34
- IPC: H01L23/34 ; H01L23/488 ; H01L23/367 ; H01L23/00 ; H01L21/48 ; H01L23/528 ; H01L23/532 ; H01L25/11 ; H01L25/00 ; H01L23/373 ; H01L23/433 ; H01L23/495 ; H01L23/31 ; H01L21/56
Abstract:
In a power semiconductor device, an IGBT has a collector electrode bonded to a metal plate by a bonding material. A diode has a cathode electrode bonded to the metal plate by the bonding material. An interconnection member is bonded to an emitter electrode of the IGBT by a bonding material. The bonding material includes a bonding material and a bonding material. The bonding material is interposed between the IGBT and the interconnection member. The bonding material fills a through hole formed in the interconnection member. The bonding material reaches the bonding material and is therefore connected to the bonding material.
Public/Granted literature
- US20170178995A1 Power Semiconductor Device and Method for Manufacturing Same Public/Granted day:2017-06-22
Information query
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