Invention Grant
- Patent Title: Semiconductor device and method of manufacturing the same
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Application No.: US15676945Application Date: 2017-08-14
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Publication No.: US10283458B2Publication Date: 2019-05-07
- Inventor: Kazuo Tomita , Hiroki Takewaka
- Applicant: Renesas Electronics Corporation
- Applicant Address: JP Tokyo
- Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Shapiro, Gabor and Rosenberger, PLLC
- Priority: JP2014-082804 20140414
- Main IPC: H01L21/48
- IPC: H01L21/48 ; H01L21/56 ; H01L21/66 ; H01L21/78 ; H01L23/00 ; H01L23/31 ; H01L23/495 ; H01L23/544
Abstract:
A semiconductor device with improved reliability is provided. The semiconductor device is characterized by its embodiments in that sloped portions are formed on connection parts between a pad and a lead-out wiring portion, respectively. This feature suppresses crack formation in a coating area where a part of the pad is covered with a surface protective film.
Public/Granted literature
- US20170345775A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2017-11-30
Information query
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