Invention Grant
- Patent Title: Mask optimization for multi-layer contacts
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Application No.: US15089099Application Date: 2016-04-01
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Publication No.: US10283495B2Publication Date: 2019-05-07
- Inventor: Ru-Gun Liu , Chun-Yi Lee , Jyh-Kang Ting , Juing-Yi Wu , Liang-Yao Lee , Tung-Heng Hsieh , Tsung-Chieh Tsai
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Applicant Address: TW Hsin-Chu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee Address: TW Hsin-Chu
- Agency: Haynes and Boone, LLP
- Main IPC: H01L23/528
- IPC: H01L23/528 ; H01L27/02 ; H01L27/092 ; G06F17/50 ; H01L21/8238 ; H01L21/768

Abstract:
A semiconductor device includes two elongated active regions that include source/drain regions for multiple transistor devices, a first contact layer that includes an electrical connection between the two active regions, a second contact layer that includes a connection between two gate lines, and a gate contact layer that provides connections to the gate lines.
Public/Granted literature
- US20160293590A1 Mask Optimization For Multi-Layer Contacts Public/Granted day:2016-10-06
Information query
IPC分类: