Invention Grant
- Patent Title: Semiconductor structure and method for forming the same
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Application No.: US15707554Application Date: 2017-09-18
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Publication No.: US10283510B2Publication Date: 2019-05-07
- Inventor: Chiang-Ming Chuang , Chien-Hsuan Liu , Chih-Ming Lee , Kun-Tsang Chuang , Hung-Che Liao , Hsin-Chi Chen
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Slater Matsil, LLP
- Main IPC: H01L27/11
- IPC: H01L27/11 ; H01L27/11521 ; H01L23/535 ; H01L29/06 ; H01L29/423 ; H01L27/11548 ; H01L27/11575 ; G11C16/04 ; H01L27/11519 ; H01L27/11565
Abstract:
A semiconductor structure includes a semiconductor substrate, at least one raised dummy feature, at least one memory cell, and at least one word line. The raised dummy feature is present on the semiconductor substrate and defines a cell region on the semiconductor substrate. The memory cell is present on the cell region. The word line is present adjacent to the memory cell.
Public/Granted literature
- US20180006046A1 Semiconductor Structure and Method for Forming the Same Public/Granted day:2018-01-04
Information query
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