Invention Grant
- Patent Title: Methods of filling horizontally-extending openings of integrated assemblies
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Application No.: US15848612Application Date: 2017-12-20
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Publication No.: US10283524B1Publication Date: 2019-05-07
- Inventor: Jordan D. Greenlee , Chet E. Carter , Collin Howder , John Mark Meldrim , Everett A. McTeer
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Wells St. John P.S.
- Main IPC: H01L21/28
- IPC: H01L21/28 ; H01L29/10 ; H01L29/49 ; H01L21/285 ; H01L21/768 ; H01L23/528 ; H01L23/532 ; H01L21/3213 ; H01L27/11519 ; H01L27/11556 ; H01L27/11565 ; H01L27/11582
Abstract:
Some embodiments include a method of forming an integrated structure. An assembly is formed to include a stack of alternating first and second levels. The first levels have insulative material, and the second levels have voids which extend horizontally. The assembly includes channel material structures extending through the stack. A first metal-containing material is deposited within the voids to partially fill the voids. The deposited first metal-containing material is etched to remove some of the first metal-containing material from within the partially-filled voids. Second metal-containing material is then deposited to fill the voids.
Information query
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