Invention Grant
- Patent Title: Non-volatile memory device having at least one metal and one semiconductor body extending through an electrode stack
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Application No.: US15995407Application Date: 2018-06-01
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Publication No.: US10283525B2Publication Date: 2019-05-07
- Inventor: Masaki Tsuji , Yoshiaki Fukuzumi
- Applicant: Toshiba Memory Corporation
- Applicant Address: JP Minato-ku
- Assignee: TOSHIBA MEMORY CORPORATION
- Current Assignee: TOSHIBA MEMORY CORPORATION
- Current Assignee Address: JP Minato-ku
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Main IPC: H01L27/11582
- IPC: H01L27/11582 ; H01L29/66 ; H01L29/792 ; H01L27/11556 ; H01L27/11578 ; H01L27/11531 ; H01L27/11524 ; H01L27/11529 ; H01L27/11565 ; H01L27/11597
Abstract:
According to an embodiment, a non-volatile memory device includes a first conductive layer, electrodes, an interconnection layer and at least one semiconductor layer. The electrodes are arranged between the first conductive layer and the interconnection layer in a first direction perpendicular to the first conductive layer. The interconnection layer includes a first interconnection and a second interconnection. The semiconductor layer extends through the electrodes in the first direction, and is electrically connected to the first conductive layer and the first interconnection. The device further includes a memory film between each of the electrodes and the semiconductor layer, and a conductive body extending in the first direction. The conductive body electrically connects the first conductive layer and the second interconnection, and includes a first portion and a second portion connected to the second interconnection. The second portion has a width wider than the first portion.
Public/Granted literature
- US20180286882A1 NON-VOLATILE MEMORY DEVICE AND METHOD OF MANUFACTURING SAME Public/Granted day:2018-10-04
Information query
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