Invention Grant
- Patent Title: Image sensor and method for fabricating the same
-
Application No.: US15857695Application Date: 2017-12-29
-
Publication No.: US10283540B2Publication Date: 2019-05-07
- Inventor: Yun Ki Lee , Min Wook Jung
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do
- Agency: Muir Patent Law, PLLC
- Priority: KR10-2016-0183315 20161230
- Main IPC: H01L27/146
- IPC: H01L27/146

Abstract:
An image sensor is provided. The image sensor includes, a substrate including a light-receiving region and a pad region disposed around the light-receiving region, wherein the light-receiving region receives light to generate image data, a photoelectric conversion layer disposed on the light-receiving region of the substrate, an anti-reflection layer disposed on the photoelectric conversion layer and including a plurality of subsidiary anti-reflection layers, a microlens disposed on the anti-reflection layer, a delamination-preventing layer disposed on the pad region of the substrate, and a wiring layer disposed on the delamination-preventing layer, wherein a lowermost one of the subsidiary anti-reflection layers of the anti-reflection layer includes a first material composition and the delamination-preventing layer includes a second material composition different from the first material composition.
Public/Granted literature
- US20180190690A1 IMAGE SENSOR AND METHOD FOR FABRICATING THE SAME Public/Granted day:2018-07-05
Information query
IPC分类: