Invention Grant
- Patent Title: Semiconductor memory structure with magnetic tunnel junction (MTJ) cell
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Application No.: US15627651Application Date: 2017-06-20
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Publication No.: US10283700B2Publication Date: 2019-05-07
- Inventor: Shih-Wei Lin , Yuan-Tai Tseng , Shih-Chang Liu
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee Address: TW Hsinchu
- Agency: McClure, Qualey & Rodack, LLP
- Main IPC: H01L27/22
- IPC: H01L27/22 ; H01L43/08 ; H01L43/02 ; H01L43/12
Abstract:
A semiconductor memory structure is provided. The semiconductor memory structure includes a bottom electrode formed over a substrate and a magnetic tunneling junction (MTJ) cell formed over the bottom electrode. The semiconductor memory structure also includes a top electrode formed over the MTJ cell; and a first sidewall spacer layer formed on a top surface of the MTJ cell and an outer sidewall surface of the top electrode.
Public/Granted literature
- US20180366638A1 SEMICONDUCTOR MEMORY STRUCTURE WITH MAGNETIC TUNNEL JUNCTION (MTJ) CELL Public/Granted day:2018-12-20
Information query
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