The invention is notably directed to a resistive memory device comprising a control unit for controlling the resistive memory device and a plurality of memory cells. The plurality of memory cells includes a first terminal, a second terminal and a phase change segment comprising a phase-change material for storing information in a plurality of resistance states. The phase change segment is arranged between the first terminal and the second terminal. The phase change material consists of antimony. Furthermore, at least one of the dimensions of the phase change segment is smaller than 15 nanometers. Additional implementations of the resistive memory device include a related method, a related control unit, a related memory cell and a related computer program product.