Circuits and methods of fabricating circuits that provide electrostatic discharge protection, as well as methods of protecting an integrated circuit from an electrostatic discharge event at an input/output pin. The protection circuit includes a silicon-controlled rectifier having a well and an anode in the well. The anode is coupled with the input/output pin. The protection circuit further includes a control circuit coupled with the well. The control circuit is configured to supply a first control logic voltage to the well that places the silicon-controlled rectifier in a blocking state, and a second control logic voltage to the well that places the silicon-controlled rectifier in a low impedance state. When placed in its low impedance state, the silicon-controlled rectifier is configured to divert current from the electrostatic discharge event at the input/output pin away from the integrated circuit.