Invention Grant
- Patent Title: Dynamic random access memory module
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Application No.: US15954227Application Date: 2018-04-16
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Publication No.: US10285308B1Publication Date: 2019-05-07
- Inventor: Li-Min Chang , Feng-Mi Tsai , Shih-Huang Tsai , Ching-Sen Chan
- Applicant: ADATA TECHNOLOGY CO., LTD.
- Applicant Address: TW New Taipei
- Assignee: ADATA TECHNOLOGY CO., LTD.
- Current Assignee: ADATA TECHNOLOGY CO., LTD.
- Current Assignee Address: TW New Taipei
- Agency: Li & Cai Intellectual Property (USA) Office
- Priority: TW107100536A 20180105
- Main IPC: H05K7/20
- IPC: H05K7/20 ; H05K7/14 ; H05K1/18 ; H05K5/06 ; F21Y113/10 ; F21V29/87 ; F21V29/58 ; F21V29/503 ; F21V29/508

Abstract:
The instant disclosure provides a dynamic random access memory (DRAM) module including a housing, a circuit board and a fluorine engineered fluid. The housing includes an accommodating space and an opening on a side thereof. The circuit board has at least a DRAM chip disposed thereon. The circuit board is received in the accommodating space and one end of the circuit board has at least a circuit contact protruding from the opening to the exterior of the housing. The fluorine electronic engineering fluid is sealed in the accommodating space and is thermally connected to at least one of the DRAM chip.
Public/Granted literature
- US1712014A Cushioning and shock-absorbing device Public/Granted day:1929-05-07
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