Invention Grant
- Patent Title: Defect-mitigation layers in electrochromic devices
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Application No.: US15086438Application Date: 2016-03-31
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Publication No.: US10288969B2Publication Date: 2019-05-14
- Inventor: Sridhar K. Kailasam , Robin Friedman , Dane Gillaspie , Anshu A. Pradhan , Robert Rozbicki , Disha Mehtani
- Applicant: View, Inc.
- Applicant Address: US CA Milpitas
- Assignee: View, Inc.
- Current Assignee: View, Inc.
- Current Assignee Address: US CA Milpitas
- Agency: Weaver Austin Villeneuve & Sampson LLP
- Agent Brian D. Griedel
- Main IPC: G02F1/153
- IPC: G02F1/153 ; G02F1/15 ; G02F1/155 ; H01B5/14 ; H01B13/00 ; G02F1/1333 ; G02F1/1523 ; C23C14/34 ; C23C14/02 ; C23C14/06 ; C23C14/08 ; G02F1/13 ; H01J37/34

Abstract:
Electrochromic devices and methods may employ the addition of a defect-mitigating insulating layer which prevents electronically conducting layers and/or electrochromically active layers from contacting layers of the opposite polarity and creating a short circuit in regions where defects form. In some embodiments, an encapsulating layer is provided to encapsulate particles and prevent them from ejecting from the device stack and risking a short circuit when subsequent layers are deposited. The insulating layer may have an electronic resistivity of between about 1 and 108 Ohm-cm. In some embodiments, the insulating layer contains one or more of the following metal oxides: aluminum oxide, zinc oxide, tin oxide, silicon aluminum oxide, cerium oxide, tungsten oxide, nickel tungsten oxide, and oxidized indium tin oxide. Carbides, nitrides, oxynitrides, and oxycarbides may also be used.
Public/Granted literature
- US20160209723A1 DEFECT-MITIGATION LAYERS IN ELECTROCHROMIC DEVICES Public/Granted day:2016-07-21
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