Invention Grant
- Patent Title: Primary distillation boron reduction
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Application No.: US15872309Application Date: 2018-01-16
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Publication No.: US10294109B2Publication Date: 2019-05-21
- Inventor: April Ashworth , Michael W. Keevan
- Applicant: Mitsubishi Polycrystalline Silicon America Corporation (MIPSA) , MITSUBISHI MATERIALS CORPORATION
- Applicant Address: US AL Theodore JP Tokyo
- Assignee: MITSUBISHI POLYCRYSTALLINE SILICON AMERICA CORPORATION (MIPSA),MITSUBISHI MATERIALS CORPORATION
- Current Assignee: MITSUBISHI POLYCRYSTALLINE SILICON AMERICA CORPORATION (MIPSA),MITSUBISHI MATERIALS CORPORATION
- Current Assignee Address: US AL Theodore JP Tokyo
- Agency: Locke Lord LLP
- Main IPC: C01B33/039
- IPC: C01B33/039 ; C01B33/021 ; C01B33/035 ; C01B33/107

Abstract:
The present invention relates to an apparatus and a method for producing polycrystalline silicon having a reduced amount of boron compound impurities. Especially, the boron compounds are removed from the process for producing polycrystalline silicon, while the trichlorosilane is purified by distillation. The invention feeds condensed liquid trichlorosilane into a primary distillation tower below the liquid level inside the primary distillation tower thereby scrubbing the boron impurities upon contact inside the primary distillation tower. There result is trichlorosilane leaving the primary distillation tower with total amount of boron at least 10 times less.
Public/Granted literature
- US20180141819A1 PRIMARY DISTILLATION BORON REDUCTION Public/Granted day:2018-05-24
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