Invention Grant
- Patent Title: Alumina substrate
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Application No.: US15329478Application Date: 2015-08-06
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Publication No.: US10294585B2Publication Date: 2019-05-21
- Inventor: Kazuhito Yamasawa , Atsushi Ohido , Katsumi Kawasaki
- Applicant: TDK CORPORATION
- Applicant Address: JP Tokyo
- Assignee: TDK CORPORATION
- Current Assignee: TDK CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Oliff PLC
- Priority: JP2014-164067 20140812
- International Application: PCT/JP2015/072315 WO 20150806
- International Announcement: WO2016/024514 WO 20160218
- Main IPC: C23C16/34
- IPC: C23C16/34 ; C30B29/40 ; C30B19/12 ; H01L21/205 ; C30B1/02 ; C30B1/10 ; C30B9/12 ; C30B19/02 ; C30B19/08 ; C30B29/20 ; H01L21/02 ; C30B5/02 ; C30B25/02
Abstract:
An alumina substrate wherein an AlN layer is formed on a surface of the alumina substrate and a rare earth elements-containing layer and/or rare earth elements-containing regions is/are formed in the interior of the AlN layer or in the interface between the AlN layer and the alumina substrate.
Public/Granted literature
- US20170211204A1 ALUMINA SUBSTRATE Public/Granted day:2017-07-27
Information query
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