• Patent Title: Quasi-differential capacitive MEMS pressure sensor and manufacturing methods thereof
  • Application No.: US15559311
    Application Date: 2015-12-10
  • Publication No.: US10295422B2
    Publication Date: 2019-05-21
  • Inventor: Guoguang Zheng
  • Applicant: GOERTEK.INC
  • Applicant Address: CN Weifang, Shandong
  • Assignee: GOERTEK.INC
  • Current Assignee: GOERTEK.INC
  • Current Assignee Address: CN Weifang, Shandong
  • Agency: Ladas & Parry LLP
  • Priority: CN201510290391 20150529
  • International Application: PCT/CN2015/096917 WO 20151210
  • International Announcement: WO2016/192361 WO 20161208
  • Main IPC: G01L9/00
  • IPC: G01L9/00 G01L9/12 G01L13/02 G01L19/06
Quasi-differential capacitive MEMS pressure sensor and manufacturing methods thereof
Abstract:
The present invention discloses a quasi-differential capacitive MEMS pressure sensor and manufacturing methods thereof. The quasi-differential capacitive MEMS pressure sensor includes a first lower electrode, a second lower electrode, a first upper electrode supported above the first lower electrode, and a second upper electrode supported above the second lower electrode, wherein the first upper electrode is a pressure-sensitive film, and a cavity between the first upper electrode and the first lower electrode is a closed cavity, so that the first upper electrode and the first lower electrode constitute an air pressure-sensitive type capacitor; and the second upper electrode and the second lower electrode constitute a reference capacitor whose capacitance does not vary with external air pressure. The pressure sensor provided by the present invention can at least partially filter out a common-mode interference signal in an output signal of the air pressure-sensitive type capacitor by use of the reference capacitor, thereby improving the stability and resolution of the output signal of the air pressure-sensitive type capacitor.
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