Invention Grant
- Patent Title: Quasi-differential capacitive MEMS pressure sensor and manufacturing methods thereof
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Application No.: US15559311Application Date: 2015-12-10
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Publication No.: US10295422B2Publication Date: 2019-05-21
- Inventor: Guoguang Zheng
- Applicant: GOERTEK.INC
- Applicant Address: CN Weifang, Shandong
- Assignee: GOERTEK.INC
- Current Assignee: GOERTEK.INC
- Current Assignee Address: CN Weifang, Shandong
- Agency: Ladas & Parry LLP
- Priority: CN201510290391 20150529
- International Application: PCT/CN2015/096917 WO 20151210
- International Announcement: WO2016/192361 WO 20161208
- Main IPC: G01L9/00
- IPC: G01L9/00 ; G01L9/12 ; G01L13/02 ; G01L19/06

Abstract:
The present invention discloses a quasi-differential capacitive MEMS pressure sensor and manufacturing methods thereof. The quasi-differential capacitive MEMS pressure sensor includes a first lower electrode, a second lower electrode, a first upper electrode supported above the first lower electrode, and a second upper electrode supported above the second lower electrode, wherein the first upper electrode is a pressure-sensitive film, and a cavity between the first upper electrode and the first lower electrode is a closed cavity, so that the first upper electrode and the first lower electrode constitute an air pressure-sensitive type capacitor; and the second upper electrode and the second lower electrode constitute a reference capacitor whose capacitance does not vary with external air pressure. The pressure sensor provided by the present invention can at least partially filter out a common-mode interference signal in an output signal of the air pressure-sensitive type capacitor by use of the reference capacitor, thereby improving the stability and resolution of the output signal of the air pressure-sensitive type capacitor.
Public/Granted literature
- US20180113040A1 QUASI-DIFFERENTIAL CAPACITIVE MEMS PRESSURE SENSOR AND MANUFACTURING METHODS THEREOF Public/Granted day:2018-04-26
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