Invention Grant
- Patent Title: Current sensor device having a sense resistor in a re-distribution layer
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Application No.: US14837048Application Date: 2015-08-27
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Publication No.: US10295570B2Publication Date: 2019-05-21
- Inventor: Gottfried Beer , Wolfgang Furtner
- Applicant: Infineon Technologies AG
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Dicke, Billig & Czaja, PLLC
- Priority: DE102014113498 20140918
- Main IPC: G01R15/14
- IPC: G01R15/14 ; G01R19/00 ; G01R1/20 ; G01R19/32

Abstract:
The electronic device for sensing a current comprises a semiconductor chip comprising a main face, an electronic circuit integrated in the semiconductor chip, a redistribution metallization layer disposed above the main face of the semiconductor chip, a current path formed in the redistribution metallization layer, the current path forming a resistor that is connected at two resistance defining end points to the electronic circuit for sensing a current flowing through the current path, and external contact elements connected with the redistribution metallization layer for feeding a current to be sensed into the current path.
Public/Granted literature
- US20160084887A1 CURRENT SENSOR DEVICE HAVING A SENSE RESISTOR IN A RE-DISTRIBUTION LAYER Public/Granted day:2016-03-24
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