Invention Grant
- Patent Title: Photomask including fiducial mark, method of patterning the photomask and method of making semiconductor device using the photomask
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Application No.: US15626643Application Date: 2017-06-19
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Publication No.: US10295899B2Publication Date: 2019-05-21
- Inventor: Hsin-Chang Lee , Chia-Jen Chen , Chih-Cheng Lin , Ping-Hsun Lin
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee Address: TW Hsinchu
- Agency: Hauptman Ham, LLP
- Main IPC: G03F1/22
- IPC: G03F1/22 ; G03F1/44 ; G03F1/54 ; G03F1/72 ; G03F1/76 ; G03F1/78 ; G03F1/84 ; G03F7/20 ; H01L21/027
Abstract:
A photomask includes a pattern region and a plurality of defects in the pattern region. The photomask further includes a first fiducial mark outside of the pattern region, wherein the first fiducial mark includes identifying information for the photomask, the first fiducial mark has a first size and a first shape. The photomask further includes a second fiducial mark outside of the pattern region. The second fiducial mark has a second size different from the first size, or a second shape different from the first shape.
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