Invention Grant
- Patent Title: Photoresists and methods of use thereof
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Application No.: US12969236Application Date: 2010-12-15
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Publication No.: US10295910B2Publication Date: 2019-05-21
- Inventor: Gerhard Pohlers
- Applicant: Gerhard Pohlers
- Applicant Address: US MA Marlborough
- Assignee: Rohm and Haas Electronic Materials LLC
- Current Assignee: Rohm and Haas Electronic Materials LLC
- Current Assignee Address: US MA Marlborough
- Agency: Mintz Levin Cohn Ferris Glovsky and Popeo, P.C.
- Agent Peter F. Corless
- Main IPC: G03F7/40
- IPC: G03F7/40 ; G03F7/039
Abstract:
New photoresist are provided that comprises a low-Tg component and that are particularly useful for ion implant lithography applications. Preferred photoresists of the invention can exhibit good adhesion to underlying inorganic surfaces such as SiON, silicon oxide, silicon nitride and other inorganic surfaces.
Public/Granted literature
- US20110256481A1 PHOTORESISTS AND METHODS OF USE THEREOF Public/Granted day:2011-10-20
Information query
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