Invention Grant
- Patent Title: Bandgap reference circuit
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Application No.: US15454684Application Date: 2017-03-09
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Publication No.: US10296032B2Publication Date: 2019-05-21
- Inventor: Jaw-Juinn Horng , Kuo-Feng Yu , Chung-Hui Chen
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee Address: TW Hsinchu
- Agency: Hauptman Ham LLP
- Main IPC: G05F3/16
- IPC: G05F3/16 ; G05F3/30

Abstract:
A bandgap reference circuit includes a first bipolar junction transistor (BJT) in series with a first current generator, the first BJT and the first current generator configured to produce a first proportional to absolute temperature (PTAT) signal. The circuit also includes a second BJT in series with a second current generator, the second BJT and the second current generator configured to produce a second PTAT signal. The bandgap reference circuit maintains a current through at least one of the first BJT or the second BJT within a constant ideality factor region of the at least one of the first BJT or the second BJT.
Public/Granted literature
- US20170177017A1 BANDGAP REFERENCE CIRCUIT Public/Granted day:2017-06-22
Information query
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