Invention Grant
- Patent Title: Integrated circuit and method of manufacturing same
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Application No.: US15707469Application Date: 2017-09-18
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Publication No.: US10296694B2Publication Date: 2019-05-21
- Inventor: Ting-Wei Chiang , Hui-Zhong Zhuang , Li-Chun Tien
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee Address: TW Hsinchu
- Agency: Hauptman Ham, LLP
- Main IPC: G06F17/50
- IPC: G06F17/50 ; H01L27/02 ; H01L27/092

Abstract:
A method includes positioning a first set of conductive traces in a first direction, manufacturing a second set of conductive traces by a first mask pattern, and electrically coupling, by at least a first via, at least one conductive trace of the first set of conductive traces to at least one conductive trace of the second set of conductive traces. The first set of conductive traces is in a first layer of an integrated circuit. The second set of conductive traces is in a second direction different from the first direction. The second set of conductive traces is in a second layer of the integrated circuit. The second layer is different from the first layer. A conductive trace of the second set of conductive traces is part of a first dummy transistor.
Public/Granted literature
- US20180004884A1 INTEGRATED CIRCUIT AND METHOD OF MANUFACTURING SAME Public/Granted day:2018-01-04
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