Invention Grant
- Patent Title: Semiconductor device and operating method thereof
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Application No.: US15693778Application Date: 2017-09-01
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Publication No.: US10297299B2Publication Date: 2019-05-21
- Inventor: Jung Hwan Lee , Da U Ni Kim
- Applicant: SK hynix Inc.
- Applicant Address: KR Icheon-si, Gyeonggi-do
- Assignee: SK hynix Inc.
- Current Assignee: SK hynix Inc.
- Current Assignee Address: KR Icheon-si, Gyeonggi-do
- Agency: William Park & Associates Ltd.
- Priority: KR10-2017-0004205 20170111
- Main IPC: G11C7/22
- IPC: G11C7/22 ; G11C8/08 ; G11C8/10 ; G11C7/06 ; G11C7/04 ; G11C16/10 ; G11C11/56 ; G11C16/04 ; G11C16/08 ; G11C16/26 ; G11C16/34 ; H01L27/11556 ; H01L27/11582

Abstract:
A semiconductor memory device may include a memory cell array. The semiconductor memory device may include a peripheral circuit coupled to the memory cell array through word lines. The semiconductor memory device may include an overdrive setting unit configured for determining an overdrive set parameter of an overdrive operation using an operation voltage applied to the word lines.
Public/Granted literature
- US20180197587A1 SEMICONDUCTOR DEVICE AND OPERATING METHOD THEREOF Public/Granted day:2018-07-12
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