A phase change memory device may be provided. The phase change memory device may include a plurality of Mats, a row control block and a column control block. The row control block may be provided to each of the Mats to control word lines. The column control block may be provided to each of the Mats to control bit lines. When a near phase change memory cell adjacent to the row control block and the column control block is selected, the phase change memory cells located at different positions, which may be spaced apart from the near phase change memory cell, in the Mats except for a reference Mat may be selected.