- Patent Title: Fail bit counter and semiconductor memory device having the same
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Application No.: US15632606Application Date: 2017-06-26
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Publication No.: US10297336B2Publication Date: 2019-05-21
- Inventor: Yong Hwan Hong , Byung Ryul Kim
- Applicant: SK hynix Inc.
- Applicant Address: KR Gyeonggi-do
- Assignee: SK hynix Inc.
- Current Assignee: SK hynix Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: IP & T Group LLP
- Priority: KR10-2016-0155188 20161121
- Main IPC: G11C29/44
- IPC: G11C29/44 ; G11C16/04 ; G11C16/34 ; G11C29/26 ; G11C29/56 ; G11C29/52 ; G11C29/12 ; G11C29/04
Abstract:
Provided herein is a fail bit counter. The fail bit counter includes a pass/fail data receiver receiving pass/fail data indicating whether memory cells coupled to a bit line sequentially pass or fail, and a fail bit accumulator receiving a fail bit generation signal from the pass/fail data receiver, and accumulating and counting fail bits which are generated.
Public/Granted literature
- US20180144813A1 FAIL BIT COUNTER AND SEMICONDUCTOR MEMORY DEVICE HAVING THE SAME Public/Granted day:2018-05-24
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